GaN nano-flowers
نویسندگان
چکیده
منابع مشابه
Coaxial GaN/InGaN/GaN Nano-Heterostructures
The optimization of the epitaxial quality and ordering of coaxial GaN/InGaN/GaN nanoheterostructures is the main focus of this study. Two approaches for the realization of upright ZnO nanipillars, used as templates for the epitaxially grown GaN layers, with their respective degrees of pattern arrangement are introduced. Consequently, the growth of coaxial GaN/InGaN/GaN quantum wells (for three ...
متن کاملSilver doped Manganese -Zinc –Ferrite Nano Flowers For Biomedical Applications
The successful application of various nanoplatforms in medicine under in vitro conditions has generated some interest in medicine-nanotechnology. The spinel-type MnZn ferrite nano powders were synthesized by Solution Combustion Synthesis (SCS) method. The important classes of soft magnetic materials Mn-Zn ferrites have high magnetic permeability and low power losses.Mn-Zn-Fe2O4 have a spinal st...
متن کاملCoaxial InGaN Epitaxy Around GaN Nano-tubes: Tracing the Signs
This work focuses on investigations of the luminescence properties of coaxial InGaN layers around single GaN nano-tubes on top of GaN micro-pyramids. The nano-tube structure was formed after the controlled desorption of ZnO nano-pillar templates during the coaxial GaN epitaxy. An intense and broad photoluminescence (PL) peak centered around 2.85 eV is attributed to transitions from a shallow do...
متن کاملFree standing GaN nano membrane by laser liftoff method
In this work, we present a method able to fabricate thin GaN nanomembranes fit for device applications. Starting from commercial GaN on sapphire substrates, MBE was used to deposit a sacrificial layer, which comprises of a superlattice of InN/InGaN, after which thin a GaN film of hundreds of nanometers thickness was grown on top. Pulsed laser irridiation with photon energy of 2.3eV gives rise t...
متن کاملWavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-m...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Today
سال: 2011
ISSN: 1369-7021
DOI: 10.1016/s1369-7021(11)70123-7